收藏本站
1.2V Drive Nch+Nch MOSFET
EM6K7
Structure
Silicon N-channel
MOSFET
Applications
Switching
Features
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
Dimensions (Unit : mm)
EMT6
Each lead has same dimensions
Abbreviated symbol : K07
3) Low voltage drive (1.2V) makes this device ideal for
portable equipment.
Inner circuit
(6)
(5)
(4)
Packaging specifications
Package
Taping
? 1
Type
Code
T2R
Basic ordering unit
(pieces)
8000
? 2
? 2
EM6K7
(1)Tr1
(2)Tr1
Source
Gate
? 1
(3)Tr2
(4)Tr2
Drain
Source
Absolute maximum ratings (Ta=25 ° C)
(1)
? 1 Esd Protection diode
? 2 Body Diode
(2)
(3)
(5)Tr2
(6)Tr1
Gate
Drain
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain ? source voltage
Gate ? source voltage
Symbol
V DSS
V GSS
Limits
20
± 8
Unit
V
V
Drain current
Continuous
Pulsed
I D
I DP ? 1
± 200
± 400
mA
mA
Total power dissipation
Channel temperature
Range of storage temperature
? 2
P D
Tch
Tstg
150
120
150
? 55 to + 150
mW / TOTAL
mW / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
833
1042
Unit
° C/W / TOTAL
° C/W / ELEMENT
? Each terminal mounted on a recommended land
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.07 - Rev.A
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
EM6M1T2R MOSFET N/P-CH 30V .1A EMT6
EM6M2T2R MOSFET N/P-CH 20V 200MA EMT6
EMH1303-TL-E MOSFET P-CH 12V 7A EMH8
EMH1307-TL-H MOSFET P-CH 20V 6.5A EMH8
EMH1405-TL-H MOSFET N-CH 30V 8.5A EMH8
EMH2308-TL-E MOSFET P-CH DUAL 30V 3A ECH8
EMH2314-TL-H MOSFET P-CH DUAL 12V 5A EMH8
EMH2408-TL-H MOSFET N-CH DUAL 20V 4A EMH8
相关代理商/技术参数
EM6M1 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive NchPch MOSFET
EM6M1T2R 功能描述:MOSFET Sm Signal, Sw MOSFET N/P Ch, -20V, 0.15A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EM6M2 制造商:ROHM 制造商全称:Rohm 功能描述:1.2V Drive Nch+Pch MOSFET
EM6M2T2R 功能描述:MOSFET 1.2V Drive Nch+Pch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EM700 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE HIGH CURRENT MINIATURE RECTIFIERS
EM710FR16BW-12L 制造商:EMLSI 制造商全称:Emerging Memory & Logic Solutions Inc 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM710FR16BW-12S 制造商:EMLSI 制造商全称:Emerging Memory & Logic Solutions Inc 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM710FR16BW-85L 制造商:EMLSI 制造商全称:Emerging Memory & Logic Solutions Inc 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM